PART |
Description |
Maker |
AH182 AH183 AH182-WLA AH183-WLA |
V(cc): 7V; 230-550mW; low power hall effect latch. For cover detector, speed measurement, home safety Low power Hall Effect Switch
|
Anachip ETC[ETC] N.A.
|
MTM8N35 MTM8N40 MTH8N40 MTH8N35 |
(MTH8N35 / MTH8N40) Power Field Effect Transistor Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS
|
Motorola Semiconductor MOTOROLA[Motorola, Inc]
|
PSMN005-75P PSMN005-75B PSMN005_75P_75B-01 |
N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. 75 A, 75 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB From old datasheet system N-channel enhancement mode field-effect transistor
|
NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
|
A3280EU A3281LH A3283UA-TL 3280 3281 3283 A3280LH |
CHOPPER-STABILIZED PRECISION HALL-EFFECT LATCHES Chopper-Stabilized, Precision Hall Effect Latch(斩波稳定,精密霍尔效应锁存器) 320 x 240 pixel format, CFL backlight available with power harness CHOPPER-STABILIZED, PRECISION HALL-EFFECT LATCHES 斩波稳定的,精密霍尔效应锁存 CHOPPER-STABILIZED/ PRECISION HALL-EFFECT LATCHES Chopper-stabilized,precision hall-effect latch
|
ALLEGRO[Allegro MicroSystems] Allegro MicroSystems, Inc.
|
IRFF120 IRFF121 IRFF122 IRFF123 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 5.0A. N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 5.0A. N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Continuous drain current 6.0A. N-CHANNEL ENHANCEMENT-MODE POWER MOS FIELD-EFFECT TRANSISTORS
|
General Electric Solid State GE Solid State
|
IRFF110 IRFF111 IRFF112 IRFF113 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.0A. N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.0A. Power MOS Field-Effect Transistors N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.5A.
|
General Electric Solid State GE Solid State
|
XP152A12C0MR |
MICRO POWER HALL-EFFECT W/TIN PLATING POWER MOS FET
|
TOREX SEMICONDUCTOR LTD. TOREX[Torex Semiconductor]
|
MRF21085 MRF21085LSR3 MRF21085R3 MRF21085SR3 |
2170 MHz, 90 W, 28 V Lateral N–Channel RF Power MOSFET RF Power Field Effect Transistors
|
Freescale (Motorola) MOTOROLA[Motorola, Inc]
|
MRF18090B MRF18090BS |
MRF18090B, MRF18090BS 1.90-1.99 GHz, 90 W, 26 V Lateral N-Channel RF Power MOSFETs RF POWER FIELD EFFECT TRANSISTORS
|
Freescale Semiconductor, Inc Motorola, Inc
|
MRF9002R2 |
MRF9002R2 1.0 GHz, 2 W, 26 V Lateral N-Channel Broadband RF Power MOSFET RF Power Field Effect Transistor Array
|
Motorola, Inc
|
MRF373ASR1 MRF373AR1 MRF373A |
MRF373AR1, MRF373ALSR1 470-860 MHz, 75 W, 32 V Lateral N-Channel Broadband RF Power MOSFETs RF POWER FIELD EFFECT TRANSISTORS
|
MOTOROLA[Motorola, Inc] MOTOROLA [Motorola, Inc]
|